| 000 | 00649 a2200265 4500 | ||
|---|---|---|---|
| 001 | 254690 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382.3:621.316.7Jai | ||
| 245 | _aSimulation study of superjunction power MOSFET (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2008 | ||
| 300 | _aiv,30 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aJain, Abhishek | ||
| 700 | _aPatil, M.B | ||
| 650 | _aPatil, M.B | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductor field-effect transistors-Simulation methods , Junction transistors , Breakdown voltage | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c203211 _d203211 |
||