| 000 | 00611 a2200265 4500 | ||
|---|---|---|---|
| 001 | 251137 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382.3Fra | ||
| 245 | _aFinFET : a feasible condidate for sub-45 nm circuits (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2008 | ||
| 300 | _avi,45 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aFrancis, Roswald | ||
| 700 | _aBaghini, Maryam Shojaei | ||
| 650 | _aBaghini, Maryam Shojaei | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetaloxide semiconductors field-effect transistors | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c202702 _d202703 |
||