000 00637 a2200265 4500
001 232067
020 _a
041 _aeng
080 _a043:621.382Ram
245 _aInvestigation of Bi0.6Dy0.3La0.1FeO3 multiferroic thin films for possible use as a memory element (R)
250 _a
260 _aMumbai
260 _bIIT
260 _c2006
300 _ax,69 p.
300 _c29 cm
490 _a
100 _aRamesh, Anisha
700 _aPinto, Richard
650 _aPinto, Richard
650 _aTheses and Dissertations
650 _aFerroelectric thin films , Ferroelectric storage cells
942 _cTD
942 _2UDC
999 _c196876
_d196876