| 000 | 00681 a2200265 4500 | ||
|---|---|---|---|
| 001 | 95342 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382.3:537.53Jai | ||
| 245 | _aSingle event and radiation effects in deep-submicron CMOS technology (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2004 | ||
| 300 | _ax,76 p. | ||
| 300 | _c29.5 cm | ||
| 490 | _a | ||
| 100 | _aJain, Palkesh | ||
| 700 | _aVasi, J. | ||
| 650 | _aVasi, J. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductors , Complementary , Metal oxide semiconductors field-effect transistors , Transistors-Effect of radiation | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c184824 _d184824 |
||