| 000 | 00626 a2200265 4500 | ||
|---|---|---|---|
| 001 | 86727 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.372:621.382Raj | ||
| 245 | _aRadiation hardening of MOS devices (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2002 | ||
| 300 | _avii,46 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aRajani Kanth | ||
| 700 | _aSharma, D.K. | ||
| 650 | _aSharma, D.K. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductors , Digital integrated circuits , Space vehicles-Atmospheric entry , Radiation | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c180423 _d180423 |
||