| 000 | 00679 a2200265 4500 | ||
|---|---|---|---|
| 001 | 84089 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.315.6:621.793Wag | ||
| 245 | _aLow temperature silicon nitride (Si3N4) by hot wire chemical vapor deposition (HWCVD) (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2001 | ||
| 300 | _aiii,57 p. | ||
| 300 | _c29.5 cm | ||
| 490 | _a | ||
| 100 | _aWaghmare, Parag C. | ||
| 700 | _aRao, V. Ramgopal and Dusane, Rajiv O. | ||
| 650 | _aRao, V. Ramgopal and Dusane, Rajiv O. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aChemical vapour deposition , Dielectric films | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c178902 _d178902 |
||