| 000 | 00820 a2200253 4500 | ||
|---|---|---|---|
| 001 | 60314 | ||
| 003 | OSt | ||
| 005 | 20230429161203.0 | ||
| 008 | 230429b |||||||| |||| 00| 0 eng d | ||
| 020 | _a0 | ||
| 040 | _cIITB | ||
| 041 | _aeng | ||
| 080 |
_a043:621.382 _bPat |
||
| 100 |
_aPatrikar, R. _eAuthor _947469 |
||
| 245 | _aHigh-field stressing of oxides in MOS structures (R) | ||
| 260 |
_aBombay _c1992 _bIIT |
||
| 300 |
_a265 p. _c28 cm |
||
| 502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d1992 |
||
| 650 | 0 |
_aTheses and Dissertations _921 |
|
| 650 | 0 |
_aMetal oxide semiconductors _92430 |
|
| 700 |
_aLal, R. _e Supervisor _918916 |
||
| 710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
||
| 942 |
_cTD _2udc |
||
| 999 |
_c171664 _d171664 |
||