000 00964 a2200265 4500
001 58767
003 OSt
005 20230429153119.0
008 230429b |||||||| |||| 00| 0 eng d
020 _a0
040 _cIITB
041 _aeng
080 _a043:621.382:537.56
_bCho
100 _aChoksi, Asheesh J.
_eAuthor
_947421
245 _aGrowth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R)
260 _aBombay
_c1991
_bIIT
300 _a200 p.
_c28 cm
502 _aThesis
_bPh.D.
_cIndian Institute of Technology Bombay. Department of Electrical Engineering
_d1991
650 0 _aTheses and Dissertations
_921
650 _aSilicon Dioxide
_947422
650 0 _aMetal oxide semiconductors
_92430
700 _aChandorkar, Arun N.
_e Supervisor
_926244
710 _964
_aIndian Institute of Technology Bombay.
_bDepartment of Electrical Engineering
942 _cTD
_2udc
999 _c170485
_d170485