000 | 00964 a2200265 4500 | ||
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001 | 58767 | ||
003 | OSt | ||
005 | 20230429153119.0 | ||
008 | 230429b |||||||| |||| 00| 0 eng d | ||
020 | _a0 | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a043:621.382:537.56 _bCho |
||
100 |
_aChoksi, Asheesh J. _eAuthor _947421 |
||
245 | _aGrowth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R) | ||
260 |
_aBombay _c1991 _bIIT |
||
300 |
_a200 p. _c28 cm |
||
502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d1991 |
||
650 | 0 |
_aTheses and Dissertations _921 |
|
650 |
_aSilicon Dioxide _947422 |
||
650 | 0 |
_aMetal oxide semiconductors _92430 |
|
700 |
_aChandorkar, Arun N. _e Supervisor _926244 |
||
710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
||
942 |
_cTD _2udc |
||
999 |
_c170485 _d170485 |