000 01018 a2200289 4500
001 51315
003 OSt
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008 230429b |||||||| |||| 00| 0 eng d
020 _a0
040 _cIITB
041 _aeng
080 _a043:621.382:539.124
_bRam
100 _aRamesh, Karmungi
_eAuthor
_947359
245 _aElectron traps in thermally nitrided silicon dioxide (R)
260 _aBombay
_c1989
_bIIT
300 _axvi,230 p.
_c28 cm
502 _aThesis
_bPh.D.
_cIndian Institute of Technology Bombay. Department of Electrical Engineering
_d1989
650 0 _aTheses and Dissertations
_921
650 0 _aSilicon nitride
_9387
650 _aElectric engineering
_vEffect of radiation on thermal electrons
_xMaterials
_947360
650 _aThermal electrons
_947361
700 _aVasi, J.
_eSupervisor
_947339
700 _a Chandorkar, A.
_eSupervisor
_947362
710 _964
_aIndian Institute of Technology Bombay.
_bDepartment of Electrical Engineering
942 _cTD
_2udc
999 _c167764
_d167764