000 | 01018 a2200289 4500 | ||
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001 | 51315 | ||
003 | OSt | ||
005 | 20230429140901.0 | ||
008 | 230429b |||||||| |||| 00| 0 eng d | ||
020 | _a0 | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a043:621.382:539.124 _bRam |
||
100 |
_aRamesh, Karmungi _eAuthor _947359 |
||
245 | _aElectron traps in thermally nitrided silicon dioxide (R) | ||
260 |
_aBombay _c1989 _bIIT |
||
300 |
_axvi,230 p. _c28 cm |
||
502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d1989 |
||
650 | 0 |
_aTheses and Dissertations _921 |
|
650 | 0 |
_aSilicon nitride _9387 |
|
650 |
_aElectric engineering _vEffect of radiation on thermal electrons _xMaterials _947360 |
||
650 |
_aThermal electrons _947361 |
||
700 |
_aVasi, J. _eSupervisor _947339 |
||
700 |
_a Chandorkar, A. _eSupervisor _947362 |
||
710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
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942 |
_cTD _2udc |
||
999 |
_c167764 _d167764 |