| 000 | 00672 a2200277 4500 | ||
|---|---|---|---|
| 001 | 35415 | ||
| 020 | _a3 | ||
| 041 | _aeng | ||
| 080 | _a621.372:621.382 Mas | ||
| 245 | _aThermal oxidation of silicon in dry oxygen growth kinetics and charge characterization in the thin regime | ||
| 250 | _a | ||
| 260 | _an.p. | ||
| 260 | _bStanford Univ., | ||
| 260 | _c1983 | ||
| 300 | _axx,258 p. | ||
| 300 | _c21.5 cm | ||
| 490 | _a | ||
| 100 | _aMassoud, Hisham Zakaria | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aSilicon oxide films | ||
| 650 | _aMetal insulator semiconductors-Congresses | ||
| 650 | _aThin films-Electric properties | ||
| 942 | _cBK | ||
| 942 | _2UDC | ||
| 999 |
_c109796 _d109796 |
||