Device engineering for high performance AlGaN/GaN HEMTs (R)

By: Takhar, Kuldeep [Author]Contributor(s): Saha, Dipankar [Supervisor] | Ganguly, Swaroop [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical EngineeringLanguage: English Publication details: Mumbai IIT 2017Description: xviii,103 p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Materials | Metal oxide semiconductor field-effect transistors -- effect transistors | Gallium Nitride (GaN) -- Electric propertiesDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2017
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Call number Status Notes Date due Barcode Item holds
Theses and Dissertations Theses and Dissertations Central Library, IITB
Pamphlet Section (Theses, Standards, Reports) 		043:621.382 Tak Not for loan D08A20 241492
Total holds: 0

Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2017

There are no comments on this title.

to post a comment.
Share

Powered by Koha