Polarization engineering for GaN based electronic and optoelectronic devices (R)
Material type: TextLanguage: English Publication details: Mumbai IIT 2018Description: xii,103 p. 30 cmSubject(s): Theses and Dissertations | Optoelectronics | Optoelectronic devices | Semiconductors | Gallium Nitride (GaN) -- Electric propertiesDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2018Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.383 San | Not for loan | D03A23 | 242585 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2018
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