Investigation of structural, optical and device characteristics of high temprature operating shortwave p-i-p InAs/GaAs quantum dot infrared photodetectors (R)
Material type:
TextLanguage: English Publication details: Mumbai IIT 2020Description: xxiii,137 p. 30 cmSubject(s): Theses and Dissertations | Electrokinetics | Semiconductors -- Optical properties | Quantum wire | Quantum dots | Quantum Dot (QD) -- HeterostructuresDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Center for Research in Nanotechnology and Science 2020
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | Reference | 537.311.33 Vid | Not for loan | 248002 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Center for Research in Nanotechnology and Science 2020
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