AlGaN/GaN-Based nanowire transistors (R)
Material type: TextLanguage: English Publication details: Mumbai IIT 2020Description: vii,86 p. 30 cmSubject(s): Theses and Dissertations | Electronics | Semiconductors devices | Nanowires | High Electron Mobility Transistors (HEMT)Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2020Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds |
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Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | Reference | 621.382 Akh | Not for loan | 247805 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2020
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