Gate stack and junction engineering for high performance ge MOSFETs (R)
Language: English Publication details: Bombay ; IIT ; 2016Description: xx,161 p; 30 cmSubject(s): Lodha, Saurabh and Ganguly, Udayan | Theses and Dissertations | Metal oxide semiconductor field-effect transistors | Germanium-Electric propertiesDissertation note: Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2016| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
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Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382.3 Bha | Not for loan | D08B02 | 239859 |
Total holds: 0
Thesis
Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2016
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