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		VLSI fabrication principles : silicon and gallium arsenide by Ghandhi, Sorab K. Language: English Publication details: New York John Wiley and Sons 1983Availability: Items available for loan: 3 Call number: 621.372:621:382 Gha(3), ... Place hold Add to cart (remove)
		No cover image available Semiconductor electrolyte interface study (Nikel oxide, silicon) (R) by Warnekar, P.P [Author] \| Bhagwat, G.K [Supervisor] \| Sundersingh, V.P [Supervisor] \| Indian Institute of Technology Bombay. Department Electrical Engineering. Language: English Publication details: Bombay IIT 1979Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1979 Availability: Items available for reference: Not for loan (1) Call number: 043:537.311.33:541.13 War. Add to cart (remove)
		Amorphous silicon and related materials by Fritzsche, Hellmut [Editor]. Series: Advances in disordered semiconductors ; v.1Material type: Text; Format: print ; Literary form: Not fiction Language: English Publication details: Singapore World Scientific 1989Availability: Items available for loan: 1 Call number: 537.311.33 Amo. Lists: Display List 30/07/2018-05/08/2018. Place hold Add to cart (remove)
		No cover image available Modeling of interface dependent efficiency and temperature coefficient of silicon based carrier selective solar cells (R) by Chatterji, Nithin [Author] \| Nair, Pradeep R [Supervisor] \| Indian Institute of Technology Bombay. Department of Electrical Engineering. Material type: Text; Format: print ; Literary form: Not fiction Language: English Publication details: Mumbai IIT 2019Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2019 Availability: Items available for reference: Not for loan (1) Call number: 043:621.355:620.91 Cha. Lists: Display List 02/12/2019 - 08/12/2019. Add to cart (remove)

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