Device engineering for high performance AlGaN/GaN HEMTs (R)
Language: English Publication details: Mumbai IIT 2017Description: xviii,103 p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Materials | Metal oxide semiconductor field-effect transistors -- effect transistors | Gallium Nitride (GaN) -- Electric propertiesDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2017Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Tak | Not for loan | D08A20 | 241492 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2017
There are no comments on this title.