III-nitrides for electronic applications : from growth to device (R)
Material type: TextLanguage: English Publication details: Mumbai IIT 2017Description: various p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Materials | Semiconductor devices -- Fabrication | Gallium Nitride (GaN) -- Electric properties | Optoelectronics | Molecular beam epitaxyDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2017Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Gho | Not for loan | D03A22 | 242726 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2017
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