Effects of ion implantation of different atomic masses on the electrical and optical properties of In(Ga) As/GaAs quantum dot (QD) heterostructures (R)

By: Upadhyay, Sourabh [Author]Contributor(s): Chakrabarti, Subhananda [Supervisor] | Jadhav, Sameer R [Supervisor] | Indian Institute of Technology Bombay. Centre for Research in Nanotechnology and ScienceMaterial type: TextTextLanguage: English Publication details: Mumbai IIT 2018Description: xviii,109 p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Optical properties | Ion implantation | Molecular beam epitaxy | Quantum dots | HeterostructuresDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Centre for Research in Nanotechnology and Science 2018
List(s) this item appears in: Display List 04/06/2018-10/06/2018
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Item type Current library Call number Status Notes Date due Barcode Item holds
Theses and Dissertations Theses and Dissertations Central Library, IITB
Pamphlet Section (Theses, Standards, Reports) 		043:621.382 Upa Not for loan D03A04 242607
Total holds: 0

Thesis Ph.D. Indian Institute of Technology Bombay. Centre for Research in Nanotechnology and Science 2018

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