Investigation of structural, optical and device characteristics of In(Ga)As/GaAs-based quantum dot infrared photodetectors with quaternary (InAlGaAs) capping (R)
Language: English Publication details: Mumbai IIT 2014Description: xxx, 164 p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Optical properties | Optoelectronic devices | nfrared detectors | Quantum dotsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2014| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382:621.391 Adh | Not for loan | D08B01 | 236541 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2014
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