Numerical simulation of radiation effects on MOS transistor (R)
Language: English Series: Publication details: Bombay ; IIT ; 1994Edition: Description: 101 p; 28 cmISBN: Subject(s): Vasi, J. and Das, A | Theses and Dissertations | Metal oxide semiconductors , Transistors , Radiation , Numerical analysisItem type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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Central Library, IITB | 043:621.382:539.16:518.6Kha | Not for loan | D03B05 | 170938 |
Total holds: 0
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