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Theoretical study of electron mobility in modulation - doped alluminum, gallium, arsenide, gallium arsenide

Theoretical study of electron mobility in modulation - doped alluminum, gallium, arsenide, gallium arsenide - - Washington, D.C. National Aeronautics & Space Administration 1983 - 9 p. - NASA TP 2170 : 1983 .

ISBN:

Subjects--Topical Terms:

GaAs, Mobility, Heterostructure, Modulation doping,Screening

Universal Decimal Class. No.: LNASA TP 2170 : 1983

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