Normal view MARC view ISBD view

Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide-gallium arsenide

Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide-gallium arsenide - - Washington, D.C. NASA 1983 - 9 p. - NASA TP 2170 : 1983 .

ISBN:

Subjects--Topical Terms:

GaAs, Mobility, Heterostructure, Modulation doping, Screening

Universal Decimal Class. No.: LNASA TP 2170 : 1983

Print
Add to your cart (remove)
More searches

Search for this title in:
Other Libraries (WorldCat) Other Databases (Google Scholar) Online Stores (Bookfinder.com) Open Library (openlibrary.org)