Investigation on ICPCVD silicon nitride for sub 100 nm MOSFET and MEMS application (R)

Minj, Albert

Investigation on ICPCVD silicon nitride for sub 100 nm MOSFET and MEMS application (R) - - Mumbai IIT 2009 - ix,66 p. 30 cm - .




Pinto, R.
Theses and Dissertations
Metal oxide semiconductor field-effect transistors , Chemical vapor deposition , Silicon nitride , X-rays dittraction

043:681.382.3Min

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